| TYPE | DESCRIPTION |
| Mfr | IXYS |
| Series | GigaMOS™ |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-204AE |
| Package / Case | TO-204AE |
| Base Product Number | IXTM67 |
IXTM67N10
الترانزستور - FET، MOSFET - واحد
MOSFET N-CH 100V 67A TO204AE
Tube
200
-